Engineer for Si power semiconductor half-lead body development
株式会社東芝
- Research
- MOSFET
- IGBT
- Power device
- Power semiconductor process technology experience
- Research related to half-lead body
- Power semiconductor process technology
- Si power semiconductor half-lead body
- Power device material
- Power device installation
- Power device process technology
- Wafer bonding
- Epitaxial process
- Ion implantation
- Wet etching
- Dry etching
- Reservoir
- Cleantroom
- Wafer
- Half-lead body
-
¥4,500,000 - 10,000,000
-
Ishikawa
-
1,001 to 10,000
Company Info
Toshiba has been independently developing technology since 1875, and has contributed to the electrification of machinery by commercializing power semiconductors. This time, we are recruiting system integration engineers for the new development of power devices, and we are looking for process integration engineers.Job Summary
In the position to be recruited, you will be responsible for the development of Si power semiconductor half-lead body process technology such as MOSFET and IGBT. You will form a team for each project, develop a product lineup, and promote development. We are looking for someone who has experience in Si power semiconductor process technology and related equipment, and who seeks knowledge in research and development in the field of power semiconductor devices.Duties
In order to advance the development of Si power semiconductor half-lead body process technology (epitaxial process, laser processing, dry etching/wet etching, wafer bonding, ion implantation, etc.) for each project, form a team, develop a product lineup, and promote development. In addition, we are looking for someone who is actively involved in the development of new manufacturing lines and new products, and seeks knowledge in the development of power semiconductor process technology and the research of power semiconductor materials, and is engaged in business.Login to see all information about offers.
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