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SiC/GaNパワー半導体のデバイスおよびプロセス研究開発

MIRISE Technologies Corporation

  • Salary ⁨¥⁩⁨5,500,000⁩ - ⁨11,000,000⁩
  • Work Location Aichi
  • Company employee count 101 to 1,000

Job Summary

株式会社ミライズテクノロジーズにおけるSiC、GaNパワー半導体の研究開発ポジションです。 SiC、GaNパワー半導体(SiC-MOSFET、縦型GaN-MOSFET、横型GaN-HEMT)のデバイスおよびプロセスに関する研究開発、SiCエピおよびGaNウェハ技術の研究開発に携わります。 パワーデバイスの企画、技術動向調査、デバイスシミュレーション設計、構造設計、レイアウト設計、プロセスシミュレーション設計、プロセス要素技術開発、プロセスインテグレーション、工程設計、試作品のテスト、分析、評価解析、ウェハ技術開発、加工装置の導入および改造を担当します。

Company Info

MIRISE Technologies Corporation is a semiconductor research and development company formed by DENSO Corporation and Toyota Motor Corporation in April 2020. The company focuses on developing next-generation in-vehicle semiconductors that are crucial for technological innovation in electric vehicles and self-driving vehicles. Its mission is to create new value in mobility through advanced semiconductor electronics technology, aiming to realize a mobility society that is environmentally friendly, safe, and comfortable.

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